DocumentCode :
3553198
Title :
Gunn-effect oscillators for the 40-60 giga-hertz range
Author :
Dunn, V.E. ; Zangrando, D.R.
Author_Institution :
Varian Associates, Palo Alto, Calif.
Volume :
16
fYear :
1970
fDate :
1970
Firstpage :
54
Lastpage :
54
Abstract :
Gunn-effect oscillators have been developed for operation in the 40-60- GHz range. The diodes are in hermetically sealed, low-reactance packages and the oscillators operate stably over a Wide temperature range. Rectangular waveguide resonators are used with iris coupling to the output waveguide. A sapphire tuning rod. tunes the oscillator over a bandwidth of several percent. The diodes, with threshold voltages in the 1.2- to 1.8-volt range, are operated in the transit-time mode, and are made from solution-grown epitaxial gallium arsenide with a doping of around 5 × 1015carriers per cm3.
Keywords :
Bandwidth; Diodes; Hermetic seals; Iris; Oscillators; Packaging; Rectangular waveguides; Temperature distribution; Threshold voltage; Tuning;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electron Devices Meeting, 1970 International
Type :
conf
DOI :
10.1109/IEDM.1970.188250
Filename :
1476362
Link To Document :
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