High-frequency parameter measurement of monolithic semiconductor devices in wafer form

A technique has been developed for probing monolithic devices before they are diced and scribed at frequencies in excess of 2 GHz. Small- or large-signal device parameters can be measured and enough measurements made on the wafer to obtain statistical information regarding the circuit or device. The advantages of the system are accuracy, speed, repeatability, and traceability. Within minutes after the wafer processing is complete you can know if the units are good or not and also how good.