MOS-Bipolar monolithic integrated circuit technology

A technique is described that makes possible the fabrication of p-channel MOS transistors and bipolar transistors within monolithic integrated circuits. Total process compatibility has been achieved without compromising either the n-p-n bipolar or p-channel MOS characteristics, p-channel MOS transistors with volts, gm= 1000 µmhos, and volts for = 60 and tox= 1000 Å have been fabricated with bipolar transistors having MHz and V.