The effective mobility of MOS transistors on insulating substrates

One of the most important electrical parameters in evaluating the performance of MOS transistors is the effective mobility of minoprity carriers in the inversion layer of the device. Published results have examined the dependence of the effective mobility on substrate orientation and doping, Si-SiO2interface state density, gate electric field, and temperature. All of the above work has been performed on bulk silicon having a high degree of crystal perfection.