• DocumentCode
    3553221
  • Title

    A self-aligned-gate field-effect transistor

  • Author

    Driver, M.C.

  • Volume
    16
  • fYear
    1970
  • fDate
    1970
  • Firstpage
    80
  • Lastpage
    80
  • Abstract
    The paper describes a technique for automatically aligning the gate contact of a Schottky-barrier gate field-effect transistor between previously fabricated source and drain contacts with submicron precision. The technique has been applied to both silicon and gallium arsenide but is not limited to these materials.
  • Keywords
    Driver circuits; Etching; FETs; Fabrication; Frequency; Gallium arsenide; Semiconductor materials; Shape; Silicon; Surface treatment;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices Meeting, 1970 International
  • Type

    conf

  • DOI
    10.1109/IEDM.1970.188271
  • Filename
    1476383
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3553221