Title :
Microwave acoustic surface-wave amplifier
Author_Institution :
Hughes Aircraft Co., Malibu, Calif.
Abstract :
Acoustic surface-wave amplifiers have been constructed for operation from 100 to 1000 MHz using ion-implanted n-type silicon positioned over LiNbO3with an air gap of a few hundred angstroms. These amplifiers are being utilized in large time-bandwidth product tapped delay lines operating in L-band to compensate for propagation loss and isolate successive taps, thereby increasing the dynamic range.
Keywords :
Aircraft manufacture; Conductivity; Delay lines; Dynamic range; L-band; Microwave amplifiers; Operational amplifiers; Pulse amplifiers; Semiconductor materials; Silicon;
Conference_Titel :
Electron Devices Meeting, 1970 International
DOI :
10.1109/IEDM.1970.188278
