Silicon gate CMOS integrated circuits

The major advantages offered by silicon-gate CMOS technology have been applied to the fabrication of monolithic integrated circuits for micropower applications. Complementary n- and p-channel enhancement-mode devices fabricated with silicon gate in conjunction with a unique substrate preparation tech, nique have exhibited threshold voltages of 0.5 ± 0.2V. Drain-to-source leakage currents, as well as pot to substrate leakage current, are typically less than 1 nA at 3 V.