Abstract :
An MOS study has demonstrated the feasibility of fabricating reliable low-threshold-voltage n-channel enhancement-mode sealed-junction beam-lead IGFET´s. By use of 10 ohm-cm p-type substrates and a gate dielectric of SiO2-Al2O3, stable 1-2 volt n-channel enhancement-mode IGFET´s can be fabricated if a high-work-function metal, such as platinum, tungsten, or molybdenum is used for the gate metallization. Platinum was chosen for initial stady because of its existing state of application in beam-lead technology. Characterization and analysis of MOS capacitors on 10 ohm-cm p-type substrates with an SiO2-Al2O3dielectric and platinum field plates will be described.
