DocumentCode
3553257
Title
GaAs varactors for broad-band paramps
Author
Calviello, J.A. ; Smilowitz, B.
Volume
16
fYear
1970
fDate
1970
Firstpage
116
Lastpage
116
Abstract
P-N and M-S epitaxial GaAs varactors have been developed for broad-band parametric amplifiers. At, zero bias the varactors have a junction capacitance of 0.15 pF, and a cutoff frequency of 700 GHz when measured at 70 GHz. Millimeter wave measurements indicate a series inductance of 0.08 nH and a shunt capacitance of 0.025 pF, These unusually low values for the parasitic elements have made it possible to achieve beyond the state-of-art broad-band and low-noise amplification.
Keywords
Capacitance measurement; Circuits; Cutoff frequency; Frequency measurement; Gallium arsenide; Inductance measurement; Millimeter wave measurements; Millimeter wave technology; Parasitic capacitance; Varactors;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting, 1970 International
Type
conf
DOI
10.1109/IEDM.1970.188304
Filename
1476416
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