DocumentCode :
3553264
Title :
Properties of double heterostructure injection lasers: Continuous room-temperature operation
Author :
Panish, M.B. ; Hayashi, Isao ; Reinhart, F.K.
Volume :
16
fYear :
1970
fDate :
1970
Firstpage :
122
Lastpage :
122
Abstract :
Recently we prepared double heterostructure (DH) injection lasers that were the first junction lasers to operate continuously at and above 300°K. The lasers are multilayer structures of AlxGa1-xAs and GaAs that have the wider-gap material on both sides of a thin layer of the narrower-gap material and that, for CW room-temperature operation, were bonded onto diamond heat sinks. At 300°K the best DH Fabry-Perot lasers have lower threshold current densities (J th \\approx 1600-3000 A/cm2) than the best single heterostructure (SH) lasers (∼ 8000 A/cm2) or the best homostructure lasers ( \\sim 20-30 kA/cm2). This results from improvement in optical and carrier confinement, and, in fact, passive guiding has been observed in active regions of the DH laser.
Keywords :
Bonding; DH-HEMTs; Fabry-Perot; Gallium arsenide; Heat sinks; Laboratories; Nonhomogeneous media; Optical materials; Telephony; Threshold current;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electron Devices Meeting, 1970 International
Type :
conf
DOI :
10.1109/IEDM.1970.188310
Filename :
1476422
Link To Document :
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