Title :
Low-threshold-voltage radiation-resistant CMNOS arrays
Author :
Cricchi, J.R. ; Ferber, R.R.
Author_Institution :
Westinghouse Defense and Space Center, Baltimore, Md.
Abstract :
Low-threshold-voltage, radiation-resistant complementary metal-nitride-oxide-semiconductor (CMNOS) arrays have been constructed utilizing a multilayer nitrid-oxide gate insulator. Both the n- and p-channel CMNOS devices havre threshold voltages that are typically 0.5 to 0.9 V. This low threshold permits operation of the arrays with a 5-volt power supply providing very low power dissipation and low insulator electric fields.
Keywords :
FETs; Insulation; Logic arrays; Metal-insulator structures; Nonhomogeneous media; Power dissipation; Power supplies; Silicon; Testing; Threshold voltage;
Conference_Titel :
Electron Devices Meeting, 1970 International
DOI :
10.1109/IEDM.1970.188328
