Normally off silicon Schottky barrier FET and its application to integrated circuits

A "normally off" silicon Schottky-barrier FET (SBFET) has been realized. The normal off characteristic was obtained by controlling the thickness of the reacted PtSi layer under the gate so that the depletion layer of the PtSi-Si Schottky-barrier contact might extend over the n-channel layer (n = 1.0 × 10¹⁶/cm³, t = 0.30 µm) and just reach the high resistivity (~ 3 kilohm-cm) p-type substrate. The threshold voltage was controlled in the range, 0 < Vth < 0.1 volt.