DocumentCode :
3553289
Title :
Electrical characteristics of GaAsP Schottky-barrier diodes
Author :
Grannemann, W.W. ; Yu, H.Y.
Volume :
16
fYear :
1970
fDate :
1970
Firstpage :
146
Lastpage :
148
Abstract :
Schottky-barrier diodes of chromium on n-type epitaxial gallium arsenide phosphide (GaAsP) were studied from 25° to 440°C. The diodes showed significant rectification properties up to a temperature of 440°C. At high temperature the reverse leakage current was 1.15 milliamperes at 25 volts with a diode area of 1.14 × 10-3cm2as compared with 0.25 microampere at room temperature.
Keywords :
Capacitance-voltage characteristics; Electric variables; Gallium arsenide; Laboratories; Metallization; Neutron radiation effects; Ohmic contacts; Schottky diodes; Semiconductor diodes; Temperature;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electron Devices Meeting, 1970 International
Type :
conf
DOI :
10.1109/IEDM.1970.188333
Filename :
1476445
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=3553289
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