• DocumentCode
    3553289
  • Title

    Electrical characteristics of GaAsP Schottky-barrier diodes

  • Author

    Grannemann, W.W. ; Yu, H.Y.

  • Volume
    16
  • fYear
    1970
  • fDate
    1970
  • Firstpage
    146
  • Lastpage
    148
  • Abstract
    Schottky-barrier diodes of chromium on n-type epitaxial gallium arsenide phosphide (GaAsP) were studied from 25° to 440°C. The diodes showed significant rectification properties up to a temperature of 440°C. At high temperature the reverse leakage current was 1.15 milliamperes at 25 volts with a diode area of 1.14 × 10-3cm2as compared with 0.25 microampere at room temperature.
  • Keywords
    Capacitance-voltage characteristics; Electric variables; Gallium arsenide; Laboratories; Metallization; Neutron radiation effects; Ohmic contacts; Schottky diodes; Semiconductor diodes; Temperature;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices Meeting, 1970 International
  • Type

    conf

  • DOI
    10.1109/IEDM.1970.188333
  • Filename
    1476445
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3553289