DocumentCode
3553296
Title
Beam-leaded GaP electroluminescent diodes
Author
Schumaker, N.E. ; Kuhn, M.
Author_Institution
Bell Telephone Laboratories, Murray Hill, N.J.
Volume
16
fYear
1970
fDate
1970
Firstpage
154
Lastpage
154
Abstract
Beam-leaded GaP electroluminescent diodes have been developed using a quasi-planar configuration. This new structure couples the advantages of beam-lead technology to the high-efficiency GaP p-n junctions prepared by liquid-phase epitaxial growth. These devices represent a significant improvement in the design of GaP diodes for applications involving discrete elements or integrated arrays.
Keywords
Bonding; Diodes; Electroluminescence; Etching; Insulation; Laboratories; P-n junctions; Radiative recombination; Substrates; Telephony;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting, 1970 International
Type
conf
DOI
10.1109/IEDM.1970.188340
Filename
1476452
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