• DocumentCode
    3553298
  • Title

    GaAs-GaxAl1-xAs electroluminescent heterostructure diodes

  • Author

    Ulmer, E.A., Jr.

  • Volume
    16
  • fYear
    1970
  • fDate
    1970
  • Firstpage
    156
  • Lastpage
    156
  • Abstract
    GaAs(Zn) electroluminescent diodes using a GaAs-GaxAl1-xAs heterostructure design with external quantum efficiencies (300°K) of 10%, that 40 milliwatts of continuous output at a current of 1 ampere, have been developed. The heterostructure consists of a GaxAl1-xAs(Zn) p-layer grown by liquid-phase epitaxy on an n-type GaAs(Si) substrate ( n = 1-4 \\times 10^{18} /cm3) with the simultaneous diffusion of Zn a distance of ∼ 2 µm into the substrate.
  • Keywords
    Bonding; Collision mitigation; Diodes; Electroluminescence; Epitaxial growth; Gallium arsenide; Geometry; Heat sinks; Substrates; Zinc;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices Meeting, 1970 International
  • Type

    conf

  • DOI
    10.1109/IEDM.1970.188342
  • Filename
    1476454
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3553298