DocumentCode :
3553298
Title :
GaAs-Gax Al1-x As electroluminescent heterostructure diodes
Author :
Ulmer, E.A., Jr.
Volume :
16
fYear :
1970
fDate :
1970
Firstpage :
156
Lastpage :
156
Abstract :
GaAs(Zn) electroluminescent diodes using a GaAs-Gax Al1-x As heterostructure design with external quantum efficiencies (300°K) of 10%, that 40 milliwatts of continuous output at a current of 1 ampere, have been developed. The heterostructure consists of a Gax Al1-x As(Zn) p-layer grown by liquid-phase epitaxy on an n-type GaAs(Si) substrate ( 
/cm3) with the simultaneous diffusion of Zn a distance of ∼ 2 µm into the substrate.
/cm3) with the simultaneous diffusion of Zn a distance of ∼ 2 µm into the substrate.Keywords :
Bonding; Collision mitigation; Diodes; Electroluminescence; Epitaxial growth; Gallium arsenide; Geometry; Heat sinks; Substrates; Zinc;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electron Devices Meeting, 1970 International
Type :
conf
DOI :
10.1109/IEDM.1970.188342
Filename :
1476454
Link To Document :
