DocumentCode :
3553345
Title :
High-current, high-voltage, moat-etched Schottky diode
Author :
Rhee, Changyong
Volume :
17
fYear :
1971
fDate :
1971
Firstpage :
64
Lastpage :
64
Abstract :
The application of Schottky diodes in high speed switching circuits has often been limited because of conventional devices inherently low reverse breakdown voltages and large leakage currents. Guard-ring Schottky diodes exhibit low leakage current and high reverse breakdown voltage, but their application has been confined to low currents because of minority carrier injection from the guard-ring at high forward bias level.
Keywords :
Schottky diodes;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electron Devices Meeting, 1971 International
Type :
conf
DOI :
10.1109/IEDM.1971.188387
Filename :
1476725
Link To Document :
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