DocumentCode
3553352
Title
The quantitative effects of interface states on the performance of charge coupled devices
Author
Tompsett, M.F.
Author_Institution
Bell Telephone Laboratories, Murray Hill, N. J.
Volume
17
fYear
1971
fDate
1971
Firstpage
70
Lastpage
70
Abstract
Quantitative calculations have shown that the performance of charge-coupled devices (CCD´s) is not limited by the motion of the mobile carriers. The limit on transfer efficiency is given by the effects of interface states. The major detrimental effects may be minimized by keeping a background charge in the device at all times. However, analysis shows that even in the presence of this background charge the limiting performance of CCD´s will still be determined by th interface state density. The analysis indicates certain features in the design and operation of CCD´s that are required to obtain maximum transfer efficiency for a given interface state density and bit size.
Keywords
Charge coupled devices; Charge measurement; Charge-coupled image sensors; Circuit testing; Current measurement; Electron devices; Interface states; Shift registers; Solid state circuits; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting, 1971 International
Type
conf
DOI
10.1109/IEDM.1971.188393
Filename
1476731
Link To Document