DocumentCode :
3553352
Title :
The quantitative effects of interface states on the performance of charge coupled devices
Author :
Tompsett, M.F.
Author_Institution :
Bell Telephone Laboratories, Murray Hill, N. J.
Volume :
17
fYear :
1971
fDate :
1971
Firstpage :
70
Lastpage :
70
Abstract :
Quantitative calculations have shown that the performance of charge-coupled devices (CCD´s) is not limited by the motion of the mobile carriers. The limit on transfer efficiency is given by the effects of interface states. The major detrimental effects may be minimized by keeping a background charge in the device at all times. However, analysis shows that even in the presence of this background charge the limiting performance of CCD´s will still be determined by th interface state density. The analysis indicates certain features in the design and operation of CCD´s that are required to obtain maximum transfer efficiency for a given interface state density and bit size.
Keywords :
Charge coupled devices; Charge measurement; Charge-coupled image sensors; Circuit testing; Current measurement; Electron devices; Interface states; Shift registers; Solid state circuits; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electron Devices Meeting, 1971 International
Type :
conf
DOI :
10.1109/IEDM.1971.188393
Filename :
1476731
Link To Document :
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