• DocumentCode
    3553352
  • Title

    The quantitative effects of interface states on the performance of charge coupled devices

  • Author

    Tompsett, M.F.

  • Author_Institution
    Bell Telephone Laboratories, Murray Hill, N. J.
  • Volume
    17
  • fYear
    1971
  • fDate
    1971
  • Firstpage
    70
  • Lastpage
    70
  • Abstract
    Quantitative calculations have shown that the performance of charge-coupled devices (CCD´s) is not limited by the motion of the mobile carriers. The limit on transfer efficiency is given by the effects of interface states. The major detrimental effects may be minimized by keeping a background charge in the device at all times. However, analysis shows that even in the presence of this background charge the limiting performance of CCD´s will still be determined by th interface state density. The analysis indicates certain features in the design and operation of CCD´s that are required to obtain maximum transfer efficiency for a given interface state density and bit size.
  • Keywords
    Charge coupled devices; Charge measurement; Charge-coupled image sensors; Circuit testing; Current measurement; Electron devices; Interface states; Shift registers; Solid state circuits; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices Meeting, 1971 International
  • Type

    conf

  • DOI
    10.1109/IEDM.1971.188393
  • Filename
    1476731