Implanted barrier two phase CCD

Any charge coupled device must have a surface potential pattern in each bit such that charge always transfers in the same direction. In the two phase device to be described, the mobile charge is forced forward by a strip of repulsive fixed charge at the input end of each electrode. This strip of charge can be obtained quite conveniently and reproducibly by means of ion implantation. It will be shown that the implant permits substantial simplification of the metallization pattern compared with other CCD´s and as a result, the device is easier to fabricate and high yields are easy to obtain.