• DocumentCode
    3553363
  • Title

    GaP monolithic display with low drive power

  • Author

    Kasami, A. ; Naito, Masakazu ; Toyama, Munehiro

  • Volume
    17
  • fYear
    1971
  • fDate
    1971
  • Firstpage
    80
  • Lastpage
    82
  • Abstract
    GaP monolithic numeric readouts with a character size of 3.1 mm × 2.2 mm have been developed by mesa-etching techniques. A serious spreading of the emitted red light beyond a segment, which is expected in GaP crystal because of low internal absorption, has been overcome by sufficiently deep mesa-etching with a combination of hot aqua regia and stable SiO2films. Completed devices with seven segments are operated at only 10 mA.
  • Keywords
    Absorption; Brightness; Displays; Drives; Epitaxial growth; Etching; Ohmic contacts; P-n junctions; Substrates;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices Meeting, 1971 International
  • Type

    conf

  • DOI
    10.1109/IEDM.1971.188403
  • Filename
    1476741
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3553363