Title :
GaP monolithic display with low drive power
Author :
Kasami, A. ; Naito, Masakazu ; Toyama, Munehiro
Abstract :
GaP monolithic numeric readouts with a character size of 3.1 mm × 2.2 mm have been developed by mesa-etching techniques. A serious spreading of the emitted red light beyond a segment, which is expected in GaP crystal because of low internal absorption, has been overcome by sufficiently deep mesa-etching with a combination of hot aqua regia and stable SiO2films. Completed devices with seven segments are operated at only 10 mA.
Keywords :
Absorption; Brightness; Displays; Drives; Epitaxial growth; Etching; Ohmic contacts; P-n junctions; Substrates;
Conference_Titel :
Electron Devices Meeting, 1971 International
DOI :
10.1109/IEDM.1971.188403