DocumentCode :
3553363
Title :
GaP monolithic display with low drive power
Author :
Kasami, A. ; Naito, Masakazu ; Toyama, Munehiro
Volume :
17
fYear :
1971
fDate :
1971
Firstpage :
80
Lastpage :
82
Abstract :
GaP monolithic numeric readouts with a character size of 3.1 mm × 2.2 mm have been developed by mesa-etching techniques. A serious spreading of the emitted red light beyond a segment, which is expected in GaP crystal because of low internal absorption, has been overcome by sufficiently deep mesa-etching with a combination of hot aqua regia and stable SiO2films. Completed devices with seven segments are operated at only 10 mA.
Keywords :
Absorption; Brightness; Displays; Drives; Epitaxial growth; Etching; Ohmic contacts; P-n junctions; Substrates;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electron Devices Meeting, 1971 International
Type :
conf
DOI :
10.1109/IEDM.1971.188403
Filename :
1476741
Link To Document :
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