Title :
High collector current in epitaxial transistors
Abstract :
In this paper we unify the treatment of high current in the collector region of epitaxial transistors. New results yielded by this unification include: a) specification of the conditions that determine the predominant mechanism controlling the degradation of β and fT.
Keywords :
Charge carrier lifetime; Degradation; Doping profiles; Forward contracts; Laboratories; Monitoring; Multidimensional systems; Semiconductor process modeling; Thyristors; Transistors;
Conference_Titel :
Electron Devices Meeting, 1971 International
DOI :
10.1109/IEDM.1971.188412
