DocumentCode
3553399
Title
Microwave oscillations in p-n-p and metal-n-p BARITT diodes
Author
Chu, J.L. ; Coleman, D.J., Jr. ; Sze, S.M.
Author_Institution
Bell Telephone Laboratories, Inc., Murray Hill, N. J.
Volume
17
fYear
1971
fDate
1971
Firstpage
126
Lastpage
126
Abstract
Studies have been made on the current transport and microwave oscillations of reach-through p-n-p and Pt-n-p devices, and their complementary structures operated as BARITT diodes (Barrier Injection Transit Time diodes) From dc current-voltage analysis, it is established that when the applied voltage is greater than the reach-through voltage, the current increases exponentially with voltage by a thermionic injection mechanism. When the injected carrier density becomes comparable or larger than the ionized impurity density, the space-charge-limited effect causes the current to vary linearly with the applied voltage.
Keywords
Diodes; Frequency; Gunn devices; Microwave circuits; Microwave devices; Microwave oscillators; Power system harmonics; Silicon; Solid state circuits; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting, 1971 International
Type
conf
DOI
10.1109/IEDM.1971.188437
Filename
1476775
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