DocumentCode :
3553399
Title :
Microwave oscillations in p-n-p and metal-n-p BARITT diodes
Author :
Chu, J.L. ; Coleman, D.J., Jr. ; Sze, S.M.
Author_Institution :
Bell Telephone Laboratories, Inc., Murray Hill, N. J.
Volume :
17
fYear :
1971
fDate :
1971
Firstpage :
126
Lastpage :
126
Abstract :
Studies have been made on the current transport and microwave oscillations of reach-through p-n-p and Pt-n-p devices, and their complementary structures operated as BARITT diodes (Barrier Injection Transit Time diodes) From dc current-voltage analysis, it is established that when the applied voltage is greater than the reach-through voltage, the current increases exponentially with voltage by a thermionic injection mechanism. When the injected carrier density becomes comparable or larger than the ionized impurity density, the space-charge-limited effect causes the current to vary linearly with the applied voltage.
Keywords :
Diodes; Frequency; Gunn devices; Microwave circuits; Microwave devices; Microwave oscillators; Power system harmonics; Silicon; Solid state circuits; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electron Devices Meeting, 1971 International
Type :
conf
DOI :
10.1109/IEDM.1971.188437
Filename :
1476775
Link To Document :
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