• DocumentCode
    3553399
  • Title

    Microwave oscillations in p-n-p and metal-n-p BARITT diodes

  • Author

    Chu, J.L. ; Coleman, D.J., Jr. ; Sze, S.M.

  • Author_Institution
    Bell Telephone Laboratories, Inc., Murray Hill, N. J.
  • Volume
    17
  • fYear
    1971
  • fDate
    1971
  • Firstpage
    126
  • Lastpage
    126
  • Abstract
    Studies have been made on the current transport and microwave oscillations of reach-through p-n-p and Pt-n-p devices, and their complementary structures operated as BARITT diodes (Barrier Injection Transit Time diodes) From dc current-voltage analysis, it is established that when the applied voltage is greater than the reach-through voltage, the current increases exponentially with voltage by a thermionic injection mechanism. When the injected carrier density becomes comparable or larger than the ionized impurity density, the space-charge-limited effect causes the current to vary linearly with the applied voltage.
  • Keywords
    Diodes; Frequency; Gunn devices; Microwave circuits; Microwave devices; Microwave oscillators; Power system harmonics; Silicon; Solid state circuits; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices Meeting, 1971 International
  • Type

    conf

  • DOI
    10.1109/IEDM.1971.188437
  • Filename
    1476775