Title :
Small-area, high-power millimeter wave avalanche diodes
Author :
Weller, K.P. ; Wen, C.P.
Author_Institution :
RCA Laboratories, Princeton, N. J.
Abstract :
A procedure has been developed for fabricating small avalanche diodes of either silicon or GaAs using a novel electrochemical etching technique plus electroplating of a copper heat-sinking-block. The etching technique provides improved uniformity and thickness control; 6 micron layers over 1.5 cm diameter wafers have been reproducibly fabricated with little difficulty.
Keywords :
Chemicals; Contracts; Copper; Etching; Gain; Gallium arsenide; Microstrip; Semiconductor diodes; Silicon; Substrates;
Conference_Titel :
Electron Devices Meeting, 1971 International
DOI :
10.1109/IEDM.1971.188439
