DocumentCode
3553403
Title
Material aspects of ion implantation
Author
MacRae, A.U.
Author_Institution
Bell Telephone Laboratories, Murray Hill, N. J.
Volume
17
fYear
1971
fDate
1971
Firstpage
132
Lastpage
132
Abstract
The implantation of high energy ions into semiconductors results in radiation damage that must be eliminated or minimized to realize chemical doping due to the implanted ions. In the case of silicon, proper heat treatment results in electrical properties that are characteristic of the number of implanted ions. This talk will cover the electrical properties of implanted silicon, annealing procedures, advantages and limitations of the technique, and methods of use.
Keywords
Annealing; Chemicals; Implants; Ion implantation; Laboratories; Resistors; Semiconductor device doping; Semiconductor materials; Silicon; Telephony;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting, 1971 International
Type
conf
DOI
10.1109/IEDM.1971.188441
Filename
1476779
Link To Document