Title :
Material aspects of ion implantation
Author_Institution :
Bell Telephone Laboratories, Murray Hill, N. J.
Abstract :
The implantation of high energy ions into semiconductors results in radiation damage that must be eliminated or minimized to realize chemical doping due to the implanted ions. In the case of silicon, proper heat treatment results in electrical properties that are characteristic of the number of implanted ions. This talk will cover the electrical properties of implanted silicon, annealing procedures, advantages and limitations of the technique, and methods of use.
Keywords :
Annealing; Chemicals; Implants; Ion implantation; Laboratories; Resistors; Semiconductor device doping; Semiconductor materials; Silicon; Telephony;
Conference_Titel :
Electron Devices Meeting, 1971 International
DOI :
10.1109/IEDM.1971.188441
