A new approach to EBS technology

The use of electron bombarded silicon diodes (ESB, EBIRD, GEISHA, etc.) in vacuum tubes to generate, fast, high peak power video pulses and cw r.f. power was suggested by C. B. Norris of Stanford University. In principle, the EBS tube should be capable of providing high gain-bandwidth products and compact tube geometry. To date, only a few of the promised results have been achieved and the performance limitations have generally been: (a) degradation of the semiconductor reverse bias characteristic (b) inadequate diode cooling capability (c) some degree of incompatibility between the semiconductor diode and its mounting structure and standard tube processing procedures. We have designed, fabricated and tested single diode targets that are compatible with standard tube processing procedures. The electrical test results are consistent with the semiconductor target design. We have, to date, achieved video pulse output powers in excess of 1 kw and r.f. peak power output greater than 300W at 30 MC. We will describe the diode design, fabrication and test procedures presently being employed at Raytheon.