DocumentCode
3553410
Title
Performance of electron beam semiconductor amplifiers
Author
Taylor, Gareth ; True, R. ; Wagner, Hannes
Volume
17
fYear
1971
fDate
1971
Firstpage
136
Lastpage
136
Abstract
This paper discusses experimental results obtained with developmental electron beam semiconductor devices used as video pulse and rf pulsed amplifiers. These devices employ a grid modulated electron beam to control the current in a semiconductor target. Test results up to 860MHz with peak pulse power in the order of 30 watts are presented for rf amplifier operation. The output circuit was an untuned 50 ohm load. Also described is the performance of a video pulse amplifier with a peak power of 2 kilowatts and a risetime of 2 nanoseconds. The experimental results are compared to the theoretical predicted values.
Keywords
Electron beams; Electronic equipment testing; Laboratories; Power amplifiers; Power generation; Pulse amplifiers; Radiofrequency amplifiers; Semiconductor diodes; Semiconductor optical amplifiers; Silicon compounds;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting, 1971 International
Type
conf
DOI
10.1109/IEDM.1971.188447
Filename
1476785
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