High power LOC heterojunction laser diodes and arrays

The Large Optical Cavity (AlGa) As-GaAs heterojunction laser diode was recently described with the unique feature that the p-type recombination region and the n-type mode guiding region were independently adjusted. A single fabrication technology can be used to prepare lasers designed for various applications ranging from CW to high peak pulsed power operation by keeping the recombination region thickness constant and simply varying the thickness of the mode guiding region. LOC lasers are capable of efficient operation to ambient temperatures in excess of 100°C. Because of their reduced susceptibility to catastrophic facet damage, suitably designed lasers and laser arrays are useful as high power sources in high temperature ambients where laser operation was previously not practical. For example, 63 W of peak pulsed power was obtained at 100°C from a small 10-element series-connected array.