DocumentCode :
3553429
Title :
A new vertical pnp transistor for integrated circuits
Author :
Ryono, K. ; Sasaki, I.
Author_Institution :
Nippon Electric Company, Ltd., Tokyo, Japan
Volume :
17
fYear :
1971
fDate :
1971
Firstpage :
154
Lastpage :
154
Abstract :
The need for a monolithic integrated circuit (IC) containing pnp and npn transistors has been recognized for a long time and is becoming serious, for obtaining an unique and simple circuit. The most widely used method recently for incorporating pnp transistors into the ICs has been the employment of the well-known lateral transistor with low performance, hFEof ∼ 1 and fTof ∼ 1 MHz. Other structures have been proposed. However the improvement of one parameter has come at the expense of other parameters. Sometimes the structures are costly and complex.
Keywords :
Boron; Cameras; Costs; Employment; Fabrication; Linear circuits; Monolithic integrated circuits; Operational amplifiers; TV; Timing;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electron Devices Meeting, 1971 International
Type :
conf
DOI :
10.1109/IEDM.1971.188464
Filename :
1476802
Link To Document :
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