Ion-implanted depletion-mode IGFET

Author

Edwards, J.R. ; Marr, G.

Author_Institution

Bell Telephone Laboratories, Inc., Allentown, Pa.

Volume

fYear

1971

fDate

1971

Firstpage

156

Lastpage

156

Abstract

P-channel IGFET\´s have been ion-implanted with boron to produce a Gaussian dopant profile which is almost entirely in the silicon. These IGFET\´s exhibit depletion mode device behavior due to a subsurface built-in channel, and they have more reproducible conductance characteristics than those fabricated by leading edge implants for which only simple shifts of threshold voltage occur. The built-in subsurface channel structure results in a device which is characterized by both a flatband (VFB) and a drain saturation voltage (VDSAT) rather than a threshold voltage. The fabrication process users 120 keV boron ions implanted through an Al2O3(500Å)-Sio2(1000Å) gate dielectric into Si at an angle of 7° from the axis. Typical device parameters for an ion dosage of $5.5 \\times 10^{11}$ /cm²are $V_{FB} = -0.9$ volt, $V_{DSAT} = -2.45$ volt at $V_{GS} = 0$ . For W/L = 1, $g_{m} = 17$ µmhos at $V_{GS} = 0$ and $V_{D} = -5$ volt.

Keywords

Boron; Channel bank filters; Circuits; Doping; Impurities; Ion implantation; Laboratories; Silicon; Threshold voltage; Voltage control;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 1971 International

Type

conf

DOI

10.1109/IEDM.1971.188465

Filename

1476803

Link To Document

https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3553430