DocumentCode
3553433
Title
High density ion-implanted C-MOS technology
Author
Toombs, T.N. ; Finnila, R.M. ; Dill, H.G. ; Bauer, L.O.
Author_Institution
Hughes Aircraft Company, Newport Beach, Calif.
Volume
17
fYear
1971
fDate
1971
Firstpage
158
Lastpage
158
Abstract
The main interest in C-MOS technology centers around low power applications. However, a major problem with the present C-MOS is the low packing density. We report here on a C-MOS technology which will at least triple the present packing density while increasing the speed for a given power level by reducing the stray capacitance. The performance of the new C-MOS is based on the combination of ion implantation, planox, and silicon gate technology. The new technology places each complementary transistors in a separate well or pot.
Keywords
Aircraft; Boron; Electric breakdown; Etching; Insulation; Isolation technology; MOSFET circuits; Resists; Silicon; Threshold voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting, 1971 International
Type
conf
DOI
10.1109/IEDM.1971.188468
Filename
1476806
Link To Document