Detecting gate-oxide shorts and delay defects in CMOS IC´s

Author

Wu, David M.

Author_Institution

IBM, Boca Raton, FL, USA

fYear

1991

fDate

7-10 Apr 1991

Firstpage

16

Abstract

Defect analysis was performed to show the relationship among process defects, gate-oxide short defects, and delay effects, SPICE transient analysis was used to find the propagation delay of the voltage response across the defective circuit. At the same time, power supply currents at static states were measured to find the correlation of static IDD currents and delay defects. It is shown that the IDD test is very effective for node-to-node short detection. However, a large class of defects cannot be detected using the IDD test. It is concluded that a testing method which combines IDD and stuck-fault testing is necessary to ensure a high level of product quality

Keywords

CMOS integrated circuits; circuit analysis computing; delays; electrical faults; integrated circuit testing; integrated logic circuits; logic testing; transient response; CMOS; IDD test; SPICE transient analysis; defect analysis; delay defects; gate-oxide shorts; manufacturing defects; monolithic IC; power supply currents; propagation delay; static IDD currents; stuck-fault testing; voltage response; CMOS integrated circuits; Circuit testing; Current supplies; Delay effects; Performance analysis; Power supplies; Propagation delay; SPICE; Transient analysis; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Southeastcon '91., IEEE Proceedings of

Conference_Location

Williamsburg, VA

Print_ISBN

0-7803-0033-5

Type

conf

DOI

10.1109/SECON.1991.147693

Filename

147693