A proposal of nonvolatile polarized memory switches by controlling junction built-in field in semiconductor interface

A generalized theory to produce the bistable switching and nonvolatile memory effect using the concept of two level energy transition phenomena is discussed. Possible processes for the electrical and optical switching of memory are classified and reviewed. Among these processes, we have concentrated our attention on a polarized memory effect using a change in the junction built-in field due to the dielectric polarization (or charge redistribution in the interface states or in the deep trap states).