• DocumentCode
    3553475
  • Title

    Influence of surface potential fluctuations on the operation of a MOS transistor in weak inversion

  • Author

    Van Overstraeten, R. ; Declerck, G. ; Broux, G.

  • Author_Institution
    Katholieke Universiteit Lueven, Heverlee, Belgium
  • Volume
    18
  • fYear
    1972
  • fDate
    1972
  • Firstpage
    28
  • Lastpage
    28
  • Abstract
    The existing theories describing the MOS transistor operation in weak inversion do not take into account the influence of surface potential fluctuations, caused by oxide charge fluctuations. These theories explain the difference between the theoretical and experimental slope of the logeID-VGcurves by the capture of minority carriers by surface states. The density of surface states necessary to explain this difference lies between 5 \\times 10^{10} and 2 \\times 10^{11} cm-2V-1.
  • Keywords
    Density measurement; Equations; Fluctuations; Impurities; Low voltage; MOSFETs; Measurement standards; Oxidation; Surface fitting;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices Meeting, 1972 International
  • Type

    conf

  • DOI
    10.1109/IEDM.1972.249247
  • Filename
    1477083
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3553475