• DocumentCode
    3553478
  • Title

    Exact analysis of current hogging effect in microwave power transistor

  • Author

    Chen, J. ; Wang, P. ; Kakihana, S. ; Park, H.

  • Author_Institution
    Hewlett-Packard Company, Palo Alto and Cupertino, California
  • Volume
    18
  • fYear
    1972
  • fDate
    1972
  • Firstpage
    32
  • Lastpage
    32
  • Abstract
    In microwave power transistors one of the most serious short-term failure modes is due to what is known as "Current-Hogging" effect. The emitter ballasting is the most effective way of minimizing this problem and is being practiced widely today. However, since the exact account of this effect requires a complex three dimensional thermal analysis coupled with minority carrier injection mechanism, which in turn is dependent on the external circuit, complete analysis of this phenomenon has not been carried out thus far.
  • Keywords
    Power transistors;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices Meeting, 1972 International
  • Type

    conf

  • DOI
    10.1109/IEDM.1972.249253
  • Filename
    1477086