DocumentCode
3553478
Title
Exact analysis of current hogging effect in microwave power transistor
Author
Chen, J. ; Wang, P. ; Kakihana, S. ; Park, H.
Author_Institution
Hewlett-Packard Company, Palo Alto and Cupertino, California
Volume
18
fYear
1972
fDate
1972
Firstpage
32
Lastpage
32
Abstract
In microwave power transistors one of the most serious short-term failure modes is due to what is known as "Current-Hogging" effect. The emitter ballasting is the most effective way of minimizing this problem and is being practiced widely today. However, since the exact account of this effect requires a complex three dimensional thermal analysis coupled with minority carrier injection mechanism, which in turn is dependent on the external circuit, complete analysis of this phenomenon has not been carried out thus far.
Keywords
Power transistors;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting, 1972 International
Type
conf
DOI
10.1109/IEDM.1972.249253
Filename
1477086
Link To Document