S-Band EBID amplifier

A prototype microwave S-band amplifier utilizing Electron Beam Irradiated Diodes (EBID) has been built and evaluated. The amplifier consists of an electron beam forming and modulating structure, a high voltage accelerating region, a reverse bias silicon diode target section, and an output circuit. A helix was designed for optimum velocity modulation of the electron beam at a beam potential of 1 kv. The low beam velocity allows for a long interaction time in a relatively short helix. A subsequent post acceleration region provides a bombardment potential of 10 kv for the EBID diode. Hot test results of the EBID amplifier showed that the velocity modulation of the electron beam current was better than 80%.