Experimental measurement of noise in charge-coupled devices

Various workers have predicted that the CCD should be a low-noise device. This paper will discuss measurements of noise in 32, 64 and 128 bit 2-phase silicon/aluminum gate CCD´s which tend to confirm these low noise predictions. The various noise sources expected in CCD´s (i.e.: Shot noise of signal and background charge, incomplete transfer noise, fast interface state noise, and output amplifier channel and reset noise) will be briefly discussed along with the spectral density anticipated for uncorrelated and correlated noise sources.