DocumentCode :
3553502
Title :
Characterization of arsenic-implanted silicon junctions
Author :
Schwettmann, F.N. ; Prince, J.L. ; Aiken, J.G.
Author_Institution :
Texas Instruments, Inc., Dallas, Texas
Volume :
18
fYear :
1972
fDate :
1972
Firstpage :
56
Lastpage :
56
Abstract :
Electrical characteristics of shallow (∼ 3500 Å) arsenic-implanted junctions have been determined for a wide range of process conditions and have been compared with arsenic diffused junctions obtained using a doped oxide diffusion source. Process conditions examined included various pre-and post-implantation gettering cycles, anneal temperatures (600 to 900°C), dose ( 
to 
ions/cm2), starting material (homogeneous, epl) and post-implantation surface passivation.
to ions/cm2), starting material (homogeneous, epl) and post-implantation surface passivation.Keywords :
Silicon;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electron Devices Meeting, 1972 International
Type :
conf
DOI :
10.1109/IEDM.1972.249285
Filename :
1477108
Link To Document :
