A versatile, ion implanted bipolar transistor

This paper describes the physical properties of arsenic and boron implanted silicon which have enabled bipolar transistors with hFEfrom 20 to > 1000 and with fTfrom 1.5 GHz to 7.7 GHz to be made. The process, which is capable of producing extremely uniform distributions of electrical parameters (e.g., hFE112 ± 1.2) is clearly extendable to a broad distribution of possible doping profiles and hence device characteristics.