Title :
Guard-ring isolated monolithic integrated circuits (GIMIC); a simple ion implanted bipolar structure
Author :
Agraz-Guerena, J. ; Payne, R.S.
Abstract :
The advantages of the collector-diffusion-isolated (CDI) bipolar device structure compared to the standard-buried (SBC) structure are improved packing density and process simplicity. Disadvantages of CDI, which have limited its range of application, are low BVCBO, high CCB, and an unavailability of Schottky diodes. Additionally, the electrical properties and yield are first order functions of the control of the (1) intrinsic base doping (hFE, VBE), and (2) extrinsic base doping (resistors).
Keywords :
Boron; Conductivity; Doping; Epitaxial layers; Ion implantation; Large scale integration; Monolithic integrated circuits; Parasitic capacitance; Resistors; Schottky diodes;
Conference_Titel :
Electron Devices Meeting, 1972 International
DOI :
10.1109/IEDM.1972.249289
