DocumentCode :
3553529
Title :
High frequency Gunn oscillators
Author :
Ruttan, T.G. ; Brown, Richard E.
Volume :
18
fYear :
1972
fDate :
1972
Firstpage :
82
Lastpage :
84
Abstract :
In the past several years there has been a renewed interest in millimeter wave sources due to the advent of microwave solid state devices. IMPATT, both single and double drift, and Gunn effect, LSA as well as fundamental mode devices, have demonstrated capabilities for power generation at millimeter wavelengths. Until recently, however, the so-called "fundamental mode\´ Gunn effect oscillator has not been able to compete with the power levels exhibited by these other devices.
Keywords :
Acoustical engineering; Bandwidth; Circuit optimization; Frequency; Gallium arsenide; Gunn devices; Oscillators; Schottky barriers; Schottky diodes; Tuning;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electron Devices Meeting, 1972 International
Type :
conf
DOI :
10.1109/IEDM.1972.249309
Filename :
1477132
Link To Document :
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