Diffusion effects in GaAs Schottky barrier impatts

Experimental characterization of both planar and mesa type GaAs Schottky barrier Impatts has been performed. Small signal measurements have been made with an automatic network analyzer and processed with the aid of a computer to accurately determine diode package and chip parameters. Diffusion effects on the drifting carriers in the depletion region have been identified as a mechanism for reducing the negative conductance of GaAs Impatt diodes. Experimental results and theoretical computations will be presented to indicate the effect of carrier diffusion in GaAs as contrasted with silicon Impart diodes.