DocumentCode :
3553533
Title :
Ion implanted double-drift impatt diodes: Low-frequency noise
Author :
Lee, D.H.
Volume :
18
fYear :
1972
fDate :
1972
Firstpage :
86
Lastpage :
88
Abstract :
The low-frequency open circuit noise spectral density, S(f) = <V2>/Δf, of an avalanching junction can be represented by S(f) = a2VB 2/Io where VB , Io , and a2are the reverse voltage, current, and a factor dependent on the ionization coefficients, respectively. For single-drift p+-n or n+-p silicon diodes 
A/Hz. However, for symmetric p-n junctions, e.g., a double-drift IMPATT diode, the first-order theory predicts 
A/Hz. Low-frequency noise measurements were made on a double-drift IMPATT to confirm the inverse current dependence and to experimentally determine the magnitude of a2.
A/Hz. However, for symmetric p-n junctions, e.g., a double-drift IMPATT diode, the first-order theory predicts A/Hz. Low-frequency noise measurements were made on a double-drift IMPATT to confirm the inverse current dependence and to experimentally determine the magnitude of a2.Keywords :
Admittance; Companies; Current density; Doppler radar; Local oscillators; Low-frequency noise; Noise measurement; Semiconductor device noise; Semiconductor diodes; Silicon;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electron Devices Meeting, 1972 International
Type :
conf
DOI :
10.1109/IEDM.1972.249313
Filename :
1477136
Link To Document :
