DocumentCode :
3553539
Title :
Thermal characterization of memory effects in MNOS capacitors
Author :
Wei, L.S.
Volume :
18
fYear :
1972
fDate :
1972
Firstpage :
92
Lastpage :
94
Abstract :
The metal-nitride-oxide-semiconductor (MNOS) device, being a potential semiconductor memory element, has been the subject of many reports. The work presented here examines the memory effects from a different angle; that is, from the thermal characteristics of the MNOS capacitors, as compared to the conventional isothermal characterization of the device.
Keywords :
Capacitors; Charge carrier processes; Electron traps; Energy storage; Insulation; Laboratories; Propulsion; Silicon on insulator technology; Temperature dependence; Tunneling;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electron Devices Meeting, 1972 International
Type :
conf
DOI :
10.1109/IEDM.1972.249318
Filename :
1477141
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=3553539
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