DocumentCode
3553539
Title
Thermal characterization of memory effects in MNOS capacitors
Author
Wei, L.S.
Volume
18
fYear
1972
fDate
1972
Firstpage
92
Lastpage
94
Abstract
The metal-nitride-oxide-semiconductor (MNOS) device, being a potential semiconductor memory element, has been the subject of many reports. The work presented here examines the memory effects from a different angle; that is, from the thermal characteristics of the MNOS capacitors, as compared to the conventional isothermal characterization of the device.
Keywords
Capacitors; Charge carrier processes; Electron traps; Energy storage; Insulation; Laboratories; Propulsion; Silicon on insulator technology; Temperature dependence; Tunneling;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting, 1972 International
Type
conf
DOI
10.1109/IEDM.1972.249318
Filename
1477141
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