DocumentCode
3553542
Title
The effect of mixed arsenic-phosphorous emitters on device properties
Author
Saltich, J.L.
Volume
18
fYear
1972
fDate
1972
Firstpage
96
Lastpage
98
Abstract
In previous work dealing with arsenic emitters in bipolar transistors, no mention has been made regarding the (limiting) current gain mechanism in these devices. This paper presents data showing that the mechanism limiting gain in arsenic emitter structures is base region recombination, whereas for phosphorous emitter devices, emitter injection efficiency limits the gain. Moreover, the emitter efficiency increases as the concentration of arsenic in phosphorous-arsenic, mixed emitters increases. This variation of emitter efficiency in arsenic, phosphorous, and mixed arsenic-phosphorous emitters permits the fabrication of devices which have specialized emitter properties.
Keywords
Electrodes; Fabrication; Frequency; Impurities; Microwave measurements; Microwave theory and techniques; Microwave transistors; Monolithic integrated circuits; Power transistors; Silicon;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting, 1972 International
Type
conf
DOI
10.1109/IEDM.1972.249321
Filename
1477144
Link To Document