Title :
A new method of emitter formation for microwave transistors and high speed monolithic integrated circuits
Author :
Kamioka, H. ; Nakayama, K. ; Takagi, M. ; Togei, R.
Author_Institution :
Fujitsu Ltd., Kawasaki, Japan
Abstract :
Toward improving the yield of high speed device technology, it is essential to overcome E-B shorting and electrode metalization problems intrinsic to the washed emitter method. We have succeeded in forming a very shallow (∼ 1500 Å) and very narrow (< 3µ) emitter with excellent reproducibility by utilizing an As (or P) doped poly-silicon (DOPOS) as emitter diffusion source.
Keywords :
Electrodes; High speed integrated circuits; Impurities; Integrated circuit yield; Microwave devices; Microwave measurements; Microwave theory and techniques; Microwave transistors; Monolithic integrated circuits; Silicon;
Conference_Titel :
Electron Devices Meeting, 1972 International
DOI :
10.1109/IEDM.1972.249322
