Abstract :
Using an analytical approach involving various approximations, Bowler and Lindholm have suggested that high current operation of epitaxial transistors may be characterized in terms of a critical voltage Vcritand a critical current Icrit. The present paper reports on a detailed computer study of high current operation: (a) assuming one-dimensional flow both above and below Vcrit, and (b) including two-dimensional effects such as emitter crowding. Measured results are also presented.
