DocumentCode :
3553577
Title :
Ion implantation for threshold control in COS/MOS circuits
Author :
Dingwall, A.G.F. ; Douglas, E.C.
Author_Institution :
RCA Solid State Technology Center, Somerville, New Jersey
Volume :
18
fYear :
1972
fDate :
1972
Firstpage :
134
Lastpage :
134
Abstract :
The use of ion implantation for close threshold control of N-MOS and P-MOS transistors has been studied from an experimental and theoretical viewpoint. Experimental determinations of ion implanted diffusion profiles, sheet resistivities and threshold voltages for boron, phosphorus, and arsenic implantations are reported for doses in the range from 
to 
ions/cm2.
to ions/cm2.Keywords :
Circuits; Ion implantation; Silicon; Telecommunication control;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electron Devices Meeting, 1972 International
Type :
conf
DOI :
10.1109/IEDM.1972.249353
Filename :
1477176
Link To Document :
