• DocumentCode
    3553577
  • Title

    Ion implantation for threshold control in COS/MOS circuits

  • Author

    Dingwall, A.G.F. ; Douglas, E.C.

  • Author_Institution
    RCA Solid State Technology Center, Somerville, New Jersey
  • Volume
    18
  • fYear
    1972
  • fDate
    1972
  • Firstpage
    134
  • Lastpage
    134
  • Abstract
    The use of ion implantation for close threshold control of N-MOS and P-MOS transistors has been studied from an experimental and theoretical viewpoint. Experimental determinations of ion implanted diffusion profiles, sheet resistivities and threshold voltages for boron, phosphorus, and arsenic implantations are reported for doses in the range from 1 \\times 10^{11} to 1 \\times 10^{14} ions/cm2.
  • Keywords
    Circuits; Ion implantation; Silicon; Telecommunication control;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices Meeting, 1972 International
  • Type

    conf

  • DOI
    10.1109/IEDM.1972.249353
  • Filename
    1477176
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3553577