A high performance silicon gate E/D MOS LSI using ion implantation

Silicon gate technology itself gives higher speed and lower power drain than aluminum gate technologies due to its low threshold voltage and self-aligned structure. Further improvements can be accomplished by using inverters of E/D structure (enhancement driver-depletion load) instead of E/E structure (enhancement driver-enhancement load). Ion implantation technology has made it possible to build both enhancement and depletion type MOS FET´s on a single chip by adding only one mask to the conventional MOS IC process.