An improved thyristor gate design developed with the aid of computer simulations

This paper describes the computer aided design, construction and rating of an improved high current, high frequency thyristor. The object was to produce a thyristor which had the advantage of a distributed gate but which avoided the expensive manufacturing steps required by interdigitated structures. A newly developed computer rating system was used as the principle design tool. A description of the resulting device geometry is given. An analysis of the computer models including those for instantaneous active aera, charge modulation, and thermal impedance as a function of area is also given. A direct comparison between computer predictions and actual performance for this device is presented as an evaluation of the design procedure´s accuracy. A brief description of the methods used for determining actual performance results is also included since they offer improvements over previously employed techniques.