Title :
A low impedance field effect transistor
Author :
Nishizawa, J. ; Terasaki, T.
Author_Institution :
Tohoku University, Sendai, Japan
Abstract :
A junction field effect transistor having non-saturation characteristics like a vacuum tride has been successfully developed. Its output impedance can be decreased to 8 ohms so that it will serve in audio applications or as an impedance transformer. The geometrical structure of this FET is analogous to that of a triode tube and is based on the idea of controlling the resistance between drain and source by a potential applied to a grid-like gate structure. Design considerations that avoid saturation of the drain current will be discussed.
Keywords :
Circuit faults; Conductivity; Electrodes; FETs; Frequency; Impedance;
Conference_Titel :
Electron Devices Meeting, 1972 International
DOI :
10.1109/IEDM.1972.249362