• DocumentCode
    3553610
  • Title

    A TEMmode diode-pumped Nd: YAG laser

  • Author

    Harris, R.L. ; Allen, R.B.

  • Author_Institution
    Wright-Patterson Air Force Base, Ohio
  • fYear
    1972
  • fDate
    4-6 Dec. 1972
  • Firstpage
    166
  • Lastpage
    166
  • Abstract
    A GaAlAs semiconductor-pumped Nd:YAG laser is described which has produced more than 80 mW of CW power in the TEMmode at a wavelength of 1.06 micrometers. The laser was optically pumped by a 7.5-cm linear array of 120 domed GaAlAs light-emitting diodes operating at room temperature and driven at a current of 250 mA. In earlier experiments, comparable diodes operated under these conditions have exhibited more than 7500 hours of operation with less than 10 percent degradation. Output power from the diode array was coupled to a 1.5-mm-diameter by 7.5- cm-long Nd:YAG rod by a gold-coated hemielliptical reflector. Temperature of the rod was controlled by thermoelectric modules and could be varied from room temperature to -22°C. The diodes, mounted along one axial focus of the elliptical reflector, were maintained near room temperature by circulating room-temperature water through the array heat-sink. The array was fabricated in a modular fashion using 15 subarray modules of eight diodes each. An array packing density of 72 percent was achieved. Average power efficiency of the 18-mil-diameter hemispherical diodes was 4.74 percent. The array produced 2.29 watts of optical pump power with a peak wavelength of 8080 Å and a spectral half-width of 255 Å.
  • Keywords
    Laser excitation; Laser modes; Light emitting diodes; Optical arrays; Optical pumping; Power lasers; Pump lasers; Semiconductor diodes; Semiconductor laser arrays; Temperature;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices Meeting, 1972 International
  • Conference_Location
    Washington, DC, USA
  • Type

    conf

  • DOI
    10.1109/IEDM.1972.249196
  • Filename
    1477205