DocumentCode
3553610
Title
A TEM∞mode diode-pumped Nd: YAG laser
Author
Harris, R.L. ; Allen, R.B.
Author_Institution
Wright-Patterson Air Force Base, Ohio
fYear
1972
fDate
4-6 Dec. 1972
Firstpage
166
Lastpage
166
Abstract
A GaAlAs semiconductor-pumped Nd:YAG laser is described which has produced more than 80 mW of CW power in the TEM∞ mode at a wavelength of 1.06 micrometers. The laser was optically pumped by a 7.5-cm linear array of 120 domed GaAlAs light-emitting diodes operating at room temperature and driven at a current of 250 mA. In earlier experiments, comparable diodes operated under these conditions have exhibited more than 7500 hours of operation with less than 10 percent degradation. Output power from the diode array was coupled to a 1.5-mm-diameter by 7.5- cm-long Nd:YAG rod by a gold-coated hemielliptical reflector. Temperature of the rod was controlled by thermoelectric modules and could be varied from room temperature to -22°C. The diodes, mounted along one axial focus of the elliptical reflector, were maintained near room temperature by circulating room-temperature water through the array heat-sink. The array was fabricated in a modular fashion using 15 subarray modules of eight diodes each. An array packing density of 72 percent was achieved. Average power efficiency of the 18-mil-diameter hemispherical diodes was 4.74 percent. The array produced 2.29 watts of optical pump power with a peak wavelength of 8080 Å and a spectral half-width of 255 Å.
Keywords
Laser excitation; Laser modes; Light emitting diodes; Optical arrays; Optical pumping; Power lasers; Pump lasers; Semiconductor diodes; Semiconductor laser arrays; Temperature;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting, 1972 International
Conference_Location
Washington, DC, USA
Type
conf
DOI
10.1109/IEDM.1972.249196
Filename
1477205
Link To Document